product summary part number bv dss r ds(on) i d IRFY044CM 60v 0.040 w 16a* provisional data sheet no. pd 9.1285c hexfet ? power mosfet hexfet technology is the key to international rectifiers advanced line of power mosfet transistors. the effi- cient geometry design achieves very low on-state re- sistance combined with high transconductance. hexfet transistors also feature all of the well-estab- lished advantages of mosfets, such as voltage con- trol, very fast switching, ease of paralleling and electri- cal parameter temperature stability. they are well-suited for applications such as switching power supplies, mo- tor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistors totally isolated package elimi- nates the need for additional isolating material between the device and the heatsink. this improves thermal effi- ciency and reduces drain capacitance. IRFY044CM features n hermetically sealed n electrically isolated n simple drive requirements n ease of paralleling n ceramic eyelets n-channel 60 volt, 0.040 w hexfet absolute maximum ratings parameter IRFY044CM units i d @ v gs =10v, t c = 25c continuous drain current 16* i d @ v gs =10v, t c = 100c continuous drain current 16* a i dm pulsed drain current ? 156 p d @ t c = 25c max. power dissipation 100 w linear derating factor 0.8 w/k ? v gs gate-to-source v oltage 20 v e as single pulse avalance energy ? 100 mj i ar avalance current ? 16* a e ar repetitive avalanche energy ? 10 mj dv/dt peak diode recovery dv/dt ? 4.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in (1.6mm) from case for 10 sec) weight 4.3(typical) g * i d current limited by pin diameter
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.68 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.040 v gs = 10v, i d = 16a ? on-state resistance w v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a g fs forward tr ansconductance 17 s ( )v ds 3 15v, i ds = 16a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max. rating,v gs = 0v 250 v ds = 0.8 x max. rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 29 88 v gs = 10v, i d = 16a q gs gate-to-source charge 6.7 15 v ds = max. rating x 0.5 q gd gate-to-drain (miller) charge 18 52 see figures 6 and 13 t d(on) turn-on delay time 23 v dd = 30v, i d = 16a, r g = 9.1 w tr rise time 130 v gs = 10v t d(off) turn-off delay time 81 t f fall time 79 see figure 10 l d internal drain inductance 8.7 l s internal source inductance 8.7 c iss input capacitance 2400 v gs = 0v, v ds = 25v c oss output capacitance 1100 pf f = 1.0mhz. c rss reverse tr ansfer capacitance 230 see figure 5 thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.25 r thja junction-to-ambient 80 k/w ? typical socket mount r thcs case-to-sink 0.21 mounting surface flat, smooth w a nc nh ns measured from the drain lead, 6mm (0.25 in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 16 i sm pulse source current (body diode) ? 156 v sd diode forw ard v oltage 2.5 v t j = 25c, i s = 16a, v gs = 0v ? t rr reverse recovery time 220 ns t j = 25c, i f = 16a, di/dt 100 a/ m s q rr reverse recovery charge 1.6 c v dd 50 v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . IRFY044CM device modified mosfet symbol showing the integral reverse p-n junction rectifier. a
fig. 5 typical capacitance vs. drain-to-source voltage fig. 6 typical gate charge vs. gate-to-source voltage fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics t c = 25c IRFY044CM device fig. 2 typical output characteristics t c = 150c 39a 16a
fig. 10a switching time test circuit fig. 10b switc hing time waveforms fig. 9 maximum drain current vs. case temperature fig. 7 t ypical source-to-drain diode forward voltage IRFY044CM device 0 10 20 30 40 25 50 75 100 125 150 c i , drain current (amps) d t , case temperature (c) a limited by package 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c o o v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig. 8 maximum safe operating area i d , drain current (a)
fig. 11 maximum effective transient thermal impedance, junction-to-case vs. pulse duration fig. 12c max. avalanche energy vs. current t p v (br)dss i as fig. 12a unclamped inductive test circuit fig. 12b unclamped inductive waveforms r g i as 0.01 w t p d.u.t l v ds + - v dd driver a fig. 13a gate charge t est cir cuit IRFY044CM device 0 20 40 60 80 100 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a s tarting t , junction temperature (c ) v = 2 5v i = 5 1 a d dd 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal resp o 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) 10 1 .1 .01 thermal response (z thjc)
fig. 13b basic gate charge waveform case outline and dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m-1982 2. controlling dimension: inch 3. dimensions are shown in millimeters (inches) 4. outline conforms to jedec outline to-257aa pin 1 - drain pin 2 - source pin 3 - gate 1 2 3 to-257aa non-standard pin configuration pin 1 - gate pin 2 - drain pin 3 - source order part type irfy044c caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44(0) 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 IRFY044CM device ? repetitive rating; pulse width limited by maximum junc- tion temperature (see figure 11). ? @ v dd = 25v, star ting t j = 25c, e as = [0.5 * l * ( ) * [bv dss /(bv dss -v dd )] peak i l = 16a, v gs = 10v, 25 r g 200 w ? i sd 16a, di/dt 100a/s, v dd bv dss , t j 150c ? pulse width 300 s; duty cycle 2% ? k/w = c/w w/k = w/c notes:
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